sfh 2332 schnelle pin-fotodiode high speed pin photodiode lead (pb) free produc t - rohs compliant 2008-05-25 1 wesentliche merkmale ? speziell geeignet fr anwendungen von 350nm bis 780nm ? sehr kurze schaltzeit im spezifizierten wellenl?ngenbereich ? sehr kurze schaltzeiten bei geringer sperrspannung (<5v) ? extrem kurze abklingzeit (?slow tail?) ? 3 mm plastikbauform im led-geh?use anwendungen ? optische laufwerke (cd, dvd, bluray) ? lichtschranken fr gleich- und wechselbetrieb ? industrieelektronik ? ?messen/steuern/regeln? ? abstandsmesser typ type bestellnummer ordering code sfh 2332 q65110a6342 features ? especially suitable for applications from 350nm to 780nm ? fast switching time within the specified wavelength ? fast switching time at low reverse voltage (<5v) ? ultra short decay time (?slow tail?) ? 3 mm led plastic package applications ? optical disc drives (cd, dvd, bluray) ? photointerrupters ? industrial electronics ? for control and drive circuits ? range finder
2008-05-25 2 sfh 2332 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 ? + 100 c sperrspannung reverse voltage v r 15 v sperrspannung, t < 120 s reverse voltage v r 20 v verlustleistung total power dissipation p tot 150 mw elektrostatische entladung electrostatic discharge human body model accord ing to eos/esd-5.1-1993 esd 2 kv kennwerte (t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit min typ max spektrale fotoempfindlichkeit des chips spectral sensitivity of the chip = 405nm = 650nm = 780nm s 0.26 0.49 0.54 a/w fotostrom, v r = 5 v , e e = 0.5 mw/cm 2 photocurrent = 405nm = 650nm = 780nm i p 4.5 7.6 8.5 a wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max 780 nm spektraler bereich der fotoempfindlichkeit spectral range of sensitivity, s = 10% of s max 350 1050 nm abmessung der bestrahlungsempfindlichen fl?che dimensions of radi ant sensitive area l b l w 0.6 0.6 mm mm abstand chipoberfl?che zu geh?useoberfl?che distance chip front to case surface h 2.4 ? 2.8 mm
sfh 2332 2008-05-25 3 halbwinkel half angle ? 17 grad deg. dunkelstrom, v r = 5v dark current i r 0.05 5 na anstiegs- und abfallzeit des fotostromes rise and fall time of the photocurrent, 10% - 90% v r = 5v ; r l = 50 ; i p = 1 ma ; = 405nm = 650nm = 780 nm; t r , t f 1.5 1.6 1.8 5 5 5 ns kapazit?t, f = 1 mhz, e = 0, v r = 0 v; capacitance c 0 4.5 5 pf temperaturkoeffizient von s temperature coefficient of s = 405 nm = 650 nm = 780 nm tc i -0.06 0.00 0.01 %/k %/k %/k rausch?quivalente strahlungsleistung 1) noise equivalent power, = 650 nm nep 8.2 10 -15 1) kennwerte (t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit min typ max w hz ----------- - nep 17,9 15 ? 10 i r s --------- =
sfh 2332 2008-05-25 4 relative spectral sensitivity s rel = f ( ) dark current i r = f ( v r ), e = 0 directional characteristics s rel = f ( ? ) 400 0 nm % ohf03041 20 40 60 80 100 500 600 700 800 900 1100 10 30 50 70 rel s v ohf03043 r r i -2 10 0 10 -1 10 0 v na 5 10 15 10 -3 5 5 capacitance c = f ( v r ), e = 0 total power dissipation p tot = f ( t a ) ohf03042 0 r v -3 10 -2 10 -1 10 0 10 1 10 2 10 v pf 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 c switching time t r ,t f = f ( v r ) ohf03917 v r r t ns 0v 0 , f t 2 4 6 8 10 12 16 1 2 3 4 5 6 7 8
sfh 2332 2008-05-25 5 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). empfohlenes l?tpaddesign wellenl?ten (ttw) recommended solder pad ttw soldering ma?e in mm (inch) / dimensions in mm (inch). 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.142) ?3.1 (0.122) ?2.9 (0.114) 4.1 (0.161) 3.9 (0.154) 5.2 (0.205) 4.5 (0.177) 3.5 (0.138) 6.3 (0.248) 5.9 (0.232) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) 2.54 (0.100) spacing 0.7 (0.028) 0.4 (0.016) chip position collector (transistor) area not flat geoy6653 0.4 (0.016) 0.8 (0.031) cathode (diode) 4 (0.157) ohlpy985 4.8 (0.189) cathode soldering area area to improve power dissipation
2008-05-25 6 sfh 2332 l?tbedingungen soldering conditions wellenl?ten ttw (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
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